国家/地区 中国（5）
IPC部 C（4）
IPC大类 C01（3） C23（2）
IPC小类 C01B（3） C23C（2）
IPC C01B031/04（3） C01B032/184（2） C23C016/26（2）
发明人 WANG Z（5）
公开年 2015（5）
申请年 2015（5） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（5）

Photoelectric detector preparing method involves forming graphene layer, and obtaining structural surface, and contacting graphene layer and thin film semiconductor layer with each other to form hetero-junction portion.

CAO D, CHENG X, ZHANG D, WANG Q, WANG Z, ZHENG L, YU Y, CHEN L

Preparation of nanowire and graphene composite material by providing silicon germanium-on-insulator substrate comprising silicon substrate, oxide layer and silicon germanium layer from bottom to top, and etching silicon germanium layer.

DI Z, XUE Z, ZHANG M, YE L, DAI J, WANG Z

Preparing reversible N-type graphene by forming graphene layer on substrate, placing substrate, on which graphene layer grows, in atomic layer deposition chamber, and increasing concentration of water in water/oxygen molecule pair.

CAO D, CHENG X, ZHANG D, WANG Q, WANG Z, ZHENG L, YU Y, CHEN L

Preparation of wrinkle-free graphene involves subjecting catalytic substrate to ion injection, forming discrete end injection units at catalytic substrate, and heating catalytic substrate in growth chamber.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Transfer method for graphene involves performing microwave treatment of bond sheet so that germanium-hydrogen bond is broken, and generating hydrogen such that graphene is peeled from substrate.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z