国家/地区 韩国（9）
IPC部 C（9）
IPC大类 C01（9）
IPC小类 C01B（9）
IPC C01B031/04（9） C23C016/26（9） B05D001/00（4）
B05B001/30（3） F16K031/06（2）
发明人 LEE Y T（9）
公开年 2016（9）
申请年 2016（9） 
专利权人 LEE Y T（9）

Piezo injection system of gas blower for use in noncatalytic substrate growth graphene manufacturing device, performs electrical discharge, fluid pressure reduction, valve closure, needle closure and gas injection pause orderly.

LEE Y T

Device for manufacturing non-catalytic graphene substrate, comprises piezo injection system for electric charging, operating piezo actuator, increasing hydraulic coupler fluid pressure, opening pressure control valve and opening needle.

LEE Y T

Solenoid injection system operating in sequence of blocking voltage, stopping a solenoid valve module, stopping a piston module, closing a needle, and stopping a gas jet; and useful in graphene grown substrate producing device.

LEE Y T

Device for manufacturing non-catalytic graphene substrate, comprises solenoid injection system having elementarily adopted array arrangement.

LEE Y T

Apparatus for manufacturing non-catalytic substrate for graphene growth, for electronic component, has gas supply controller which is provided with solenoid valve for controlling the amount of the gas supplied to the gas blower.

LEE Y T

Device for manufacturing non-catalytic graphene substrate, comprises piezo injection system for blocking electrical discharge or voltage, pausing piezo actuator, reducing hydraulic coupler pressure and closing pressure control valve.

LEE Y T

Manufacturing method of noncatalytic substrate growth graphene, involves forming board layer on substrate, and enhancing concentration of carbon containing gas, and forming megacryst by graphene.

LEE Y T

Manufacturing method of non-catalytic substrate growth graphene, involves performing pre-heating process for preheating a substrate before additionally performing plasma-enhanced chemical vapor deposition.

LEE Y T

Manufacturing method of substrate growth graphene used in e.g. CPU, involves heating copper layer, and removing oxide of copper layer, by applying hydro-plasma on surface prior to growing graphene and by supplying hydrogen.

LEE Y T