国家/地区 韩国（7）
IPC部 C（7）
IPC大类 C01（7） H01（3） B82（2）
C23（2）
IPC小类 C01B（7）
IPC C01B031/04（6） H01L029/16（3） B82Y030/00（2）
B82Y040/00（2） C01B032/182（2） C01B032/194（2）
C01B032/198（2）
发明人 PARK S（7）
公开年 2016（7）
申请年 2015（4）  2016（3） 
专利权人 SAMSUNG ELEC.（3） LG CHEM CO L.（2） LG CHEM LTD（2）

Functionalized graphene used for preparing dispersion, comprises carbon material chosen from graphene, reduced graphene oxide, and graphene oxide, and amine group containing monovalent amine group and secondary amine group.

PARK S, CHOE H, LEE S Y, GONG S Y, PARK S C, CHOE H S, PIAO S, CUI X, LI X, KONG X

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Layer structure for electronic device, has material layers which are on sides of diffusion barrier layer and diffusion barrier layer includes nano-crystalline graphene layer.

SONG H, NAM S, CHO Y, PARK S, SHIN H, LEE J, SONG H J, NAM S G, CHO Y C, PARK S J, SHIN H J, LEE J H

Seamless hexagonal boron nitride atomic monolayer thin film used for fabricating graphene device, has pseudo-single crystal structure having seamlessly merged boron nitride grains having preset dimension.

SUH H, SONG Y, WU Q, LEE S, KIM M, PARK S, KIM M W, LEE S J, PARK S W, SONG Y J, SUH H S

Partially-oxidized graphene used for forming sheet for electrical component and structural component, has oxygen-carbon atomic ratio, lateral size and thickness of specified value.

SOHN K N, LEE M J, KWON W J, PARK S H, YOO K H, SOHN K, LI M, KWON W, PARK S, YOO K

Production of graphene used for electronic component, involves high-speed homogenizing dispersion solution containing expanded graphite and dispersing agent, preparing feed solution, and high-pressure homogenizing.

YANG S B, KWON W J, PARK S H, LEE M J, SOHN K N, YANG S, SOHN K, KWON W, PARK S, LI M

Graphene device i.e. multi-functional device, for use in e.g. electronic apparatus e.g. transistor, has gate for facing functional layer with graphene layer, and gate insulation layer formed between graphene layer and gate.

HEO J, LEE K, PARK S, HEO J S, LEE K Y, PARK S J, LEE G, HUH J