国家/地区 美国（4） 韩国（3）
IPC部 H（4） B（2） C（2）
IPC大类 H01（4） C01（2）
IPC小类 H01L（3） C01B（2）
IPC
发明人 KIM S（5）
公开年 2017（5）
申请年 2017（5）
专利权人

Triboelectric type graphene-based touch sensor device for electronic equipment, has triboelectric for generating triboelectric potential by contact of friction material whose contact is detected based on current change in channel layer.

KIM S W, KIM T H, KHAN U, RYU H J, CHOI S, KANG M, KIM D H, SEUNG W C, KIM S, HO K T, HAN J R, SEUNG C, KIM D, WAN C S

Preparing metal-carbon composite involves mixing carbon nanotube, graphene oxide, metal salt and metal nanowire to obtain aqueous mixture, freezing to obtain cryo-composite, drying to obtain dry composite and reducing.

WORSLEY M A, SATCHER J H, KUCHEYEV S, CHARNVANICHBORIKARN S, COLVIN J D, FELTER T E, KIM S, MERRILL M, ORME C A

Semiconductor device e.g. dynamic RAM device for use in electronic system, has doped pattern provided between buffer and channel patterns, and buffer pattern provided, where doped pattern comprises graphene injected with impurity.

CANTORO M, WU Z, BHUWALKA K, KIM S, MAEDA S

Preparing silicon-carbon-graphene composite involves drying waste silicon sludge, acid leaching, and selectively separating and recovering silicon through ultrasound treatment, and centrifuging solution containing dried sludge.

DONG J H, KWON C H, SUP K D, HYUK C J, KYUNG K S, JANG H, CHANG H, KIL D, CHOI J, KIM S, ZHANG X, JI D, CHOI J H, JIN X

Solar cell, has doped graphene layer formed on silicon quantum dot layer, and encapsulation layer formed on doped graphene layer and encapsulating doped graphene layer, where electrodes formed on upper and lower parts of hybrid structure.

CHOI S H, KIM S, KIM J M, SUK H C, SUNG K, JONG M K, HO C S, MIN K J