国家/地区 德国（7）
IPC部 H（5） C（3）
IPC大类 H01（4） C01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B032/182（2） H01L021/28（2）
发明人
公开年 2018（7）
申请年 2016（7）
专利权人

Semiconductor device comprises transistor doping region of vertical transistor structure, graphene layer portion adjacent to portion of transistor doping region and transistor wiring structure adjacent to graphene layer portion.

SCHULZE H, RUPP R, RUHL G

Method for completing knowledge graphene from predicates and associated units, involves embedding identified predicates and associated units into vector space for completing knowledge grapheme, and determining weights of predicates.

MINERVINI P, COSTABELLO L, MUNOZ JIMENEZ E F, NOVACEK V, VANDENBUSSCHE P, MUNOZ J E F

Composite semiconductor saturable absorption mirror structure, has buffer layer located on substrate, distributed Bragg reflector located on buffer layer, and graphene saturable absorber arranged in quantum well saturable absorber.

ZHANG Z, LIU Q

Method for reducing formation of metallic lithium on anode of lithium-ion battery, involves arranging electrolyte between anode and cathode, and coating separator-side surface of anode with graphene.

BAUER C, LUX S

Doping graphene layer, comprises depositing graphene layer on carrier substrate, removing carrier substrate from graphene layer in first liquid and applying graphene layer on surface region of target substrate to be coated in second liquid.

Medical device e.g. medical instrument, has contaminable surface having coating comprising graphene oxide/graphene oxide-containing composite material for generating autodisinfecting effect on surface, or surface of device component.

KUTH R, POPESCU S, TREFFER P

Heating system of thermally resilient molding for heating of aggregates and materials, has electrically conductive structure layer that is provided with defined network of aluminum, graphene nano-platelets, molybdenum or tungsten.

BEIER G