国家/地区 美国（4） 台湾（2）
IPC部 H（4） C（3）
IPC大类 H01（4） C23（3）
IPC小类 H01L（4） C23C（3）
IPC C23C016/26（3） C23C016/04（2） C23C016/455（2）
H01L021/033（2） H01L021/3205（2） H01L021/768（2）
发明人
公开年 2021（4）
申请年 2021（2） 
专利权人 APPLIED MATERIALS INC（4）

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Forming electronic device involves forming graphene barrier layer on substrate surface and depositing fill layer over the graphene barrier layer, where graphene barrier layer prevents diffusion of halogen or boron.

NEMANI S D, MALLICK A B, GANDIKOTA S, WU Y

Forming interconnect structure, comprises e.g. etching patterned interconnect stack and first etch stop layer to form first conductive lines and second conductive lines and expose top surface of first etch stop layer and barrier layer.

JIANG H, LU C, REN H, LANG C, HWANG H D, NAIK M

Forming opening using mask involves forming mask on feature layer, forming first opening in mask to expose portion of feature layer, forming carbon layer on mask and removing portions of carbon layer and exposed portion of feature layer.

LING M, KWON T, KIM J M, YING C C