国家/地区 中国（5）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（5） C01B（2） C22C（2）
IPC C23C014/35（2） C23C016/26（2）
发明人 WANG J（6）
公开年 2022（6）
申请年 2021（6）
专利权人 FOSHAN CATEC.（2）

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Preparing auxiliary anode used in external current cathode protection system, comprises preparing carboxy-containing graphene, coating liquid of iridium compound and tantalum compound, and preparing coating liquid, coating liquid and sintering.

LI X, LIU S, ZHAO C, HUANG J, LU G, WANG J, ZENG Q

Iron-based amorphous alloy film used for forming magnetic conductive layer in electromagnetic shielding film used in device, comprises iron, cobalt, boron, silicon, nickel, molybdenum and carbon.

SHI X, SUN H, WANG J, CHEN W

Preparing surface metal layer used in aerospace, electrical and electronic fields, involves e.g. coarsening, sensitizing and activating polyetheretherketone modified with carbon fiber, glass fiber, carbon nanotube and graphene, chemical plating and electroplating copper, and plating nickel.

ZHANG L, TONG X, WANG J, ZHANG J, WEN C, LI S, CUI Q, WANG X, XU J, FENG L, BAI J, LI J, WANG N

Cobalt-based amorphous alloy film useful as magnetic conductive layer in electromagnetic shielding film used in device, comprises cobalt, iron, boron, silicon, nickel, and molybdenum.

SHI X, SUN H, WANG J, CHEN W

Method for improving graphene performance by wet soaking and low-temperature annealing, involves removing poly methyl methacrylate photo-resist remaining on graphene during transfer process by annealing in low-pressure and low-temperature atmosphere.

LI M, ZHENG S, WANG J