国家/地区 台湾（38）
IPC部 C（38） H（22） B（9）
G（4） A（2） F（2）
IPC大类 C01（38） H01（19） B82（7）
C23（7） C08（5） H05（3）
A61（2） B32（2） C09（2）
C25（2） C30（2）
IPC小类 C01B（38）
IPC C01B032/182（11） C01B032/194（9） C01B032/184（6）
C01B032/19（5） C23C016/26（5） H01M004/62（5）
B82Y030/00（4） B82Y040/00（4） C01B032/186（4）
C08K003/04（4） H01L021/02（4） H01L021/768（4）
H01L023/532（4） C01B032/174（3） C01B032/198（3）
发明人 HE M（4） HUANG H（4） HUANG C（3）
HYUN L J（3） IMSUNGWOO（3） JEON Y M（3）
JIN N（3） LEE H S（3） LIM J（3）
LIM J C（3） LIM S W（3） NAM S J（3）
PARK J G（3） CHENG C（2） DIXON S（2）
公开年 2022（38）
申请年 2021（38）
专利权人 CTRON ADVANC.（4） DAEJOO ELECT.（3） UNIV CHUNG Y.（3） APPLIED MATE.（2）
HON HAI PREC.（2） PARAGRAF LTD（2） TAIWAN SEMIC.（2） UNIV NAT TAI.（2）
UNIV TSINGHU.（2）

Photothermal conversion material used in photothermal conversion material complex for sewage treatment or seawater desalination, has composite including ultraviolet light and infrared light absorbing material is selected from group consisting of tungsten oxide, titanium oxide, copper sulfide.

ASTER A T, NASEEM S, WU C, TESSEMA A A

Preparation of graphene dispersion used for preparing graphene composite film, involves mixing graphene and inducer comprising sodium silicate solution, and ultrasonically oscillating obtained dispersion.

HUNG W S, HUANG C H, SHI M

Heat dissipation structure for electronic device e.g. mobile phone, has heat dissipation module whose side protrudes from top surface of heat generating element, and does not contact with surface of carrier.

HE M, HUANG H, HUANG C

Manufacturing method of three-dimensional wrinkled graphene, involves spraying graphene solution from top into reaction element, and making gas temperature in reaction element not greater than freezing point of solvent of graphene solution.

CHEN C, LIU Y P

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Producing photoluminescence material involves placing plastic piece into working solution which is water, applying micro-plasma onto surface of the working solution, and degrading the plastic piece into multiple smaller molecular and graphene quantum dot.

CHIANG W, WENG R, WENG R J

Semiconductor device, comprises substrate and fin structure on substrate, and includes epitaxial region, etch stop layer on epitaxial region, interlayer dielectric layer on etch stop layer, and metal contact through etch stop layer and interlayer dielectric layer.

SHEN T, HUANG J, CHEN S, LIN H, LIN C, WOON W, KHADERBAD M A

Device used for active modification of thermal radiation comprises substrate, polymeric permeable membranes infused with ionic liquid electrolyte, electrodes comprising carbon nanotubes, and protective encapsulation layer.

JOHNSTONE J, DALTON A, LYNCH P, LARGE M, OGILVIE S

Manufacturing electronic device precursor e.g. organic LED, involves providing silicon wafer having growth surface, forming insulative layer on growth surface, forming graphene monolayer or multi-layer structure on insulative layer, forming further layers and/or electrical contacts.

BADCOCK T J, KAINTH J, DIXON S, GUINEY I, GRIFFIN R M

Laminate used for electronic device such as display device, comprises substrate, layer containing compound having condensed polycyclic hydrocarbon structure, and layer containing conductive material.

NAOYA N, KAZUNORI T, NOSAKA N, TAKANASHI K