国家/地区 中国（5）
IPC部 C（5） H（3）
IPC大类 C30（5） H01（3）
IPC小类 C30B（5）
IPC C30B025/18（5）
发明人 WANG G（2） WANG X（2）
公开年 2023（5）
申请年 2022（5）
专利权人

Preparation of single crystal graphene film for forming electronic devices, involves laminating copper foil and base metal foil, heating, performing roll-to-roll monocrystalline graphene film growth on molten copper foil, and growing roll-to-roll single crystal graphene film.

LUO G, WANG G, WANG X, LI J, ZHANG B

Van der Waals epitaxy method of high-quality aluminum gallium nitride materials on amorphous substrate, comprises e.g. transferring and processing first two-dimensional material layer on amorphous substrate, transferring second material layer on processed layer, performing hydrogenation passivation.

LI D, JIANG K, BEN J, ZHANG S, CHEN Y, LYU B, SUN X

Processing wafer level single crystal graphene heterojunction by direct growth method, comprises e.g. pre-processing the polycrystalline metal foil to obtain single crystal metal foil, using the crystal orientation inducing method to grow hexagonal boron nitride single crystal domain.

LI Y, WU B, LIANG S, LI S, ZHANG X, HU P, ZHANG J

Preparing three-dimensional homogeneous epitaxial structure used in preparation of optoelectronic device or electronic device, involves covering two-dimensional material layer on surface of nitride single crystal substrate, and processing one micro nano-scale blind hole on surface of material layer.

YAN Q, WANG G

Preparation of wafer-level self-supporting cadmium-tellurium thin film used in electronic device, involves cleaning two-dimensional material/sapphire substrate, assembling two-dimensional material/sapphire substrate and support by molten metal material, and growing cadmium telluride thin film.

WANG J, WANG X, TANG X, CAO H, BAI W