国家/地区 美国（4） 韩国（3） 中国（2）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（6） H01L（4） C01B（3）
IPC C23C016/511（6）
发明人 LEE C（2） LEE C S（2） SHIN H（2）
SHIN H J（2） SHIN K（2） SHIN K W（2）
公开年 2023（6）
申请年 2022（4） 
专利权人 SAMSUNG ELEC.（2）

Microwave plasma chemical vapor deposition device, has metal cavity wall arranged around periphery of reaction cavity, where metal cavity wall is configured for shrinking or expanding around reaction cavity.

XU G, LIU F, WU H, AN K

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Microwave power synthesis system useful in microwave plasma chemical vapor deposition reaction system in film deposition field, comprises e.g. power synthesis chamber used for synthesizing microwave fed by microwave feed ports after injection locking frequency and injection adjusting phase.

ZHONG N, HUANG M

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Formation of graphene layer for semiconductor device, involves exposing substrate comprising conductive and dielectric materials to plasma to clean conductive material, and exposing substrate to another plasma to form graphene layer.

MEBARKI B, CHUA T C, VALENCIA C W, LEE J J, TANG X, CHEN X