国家/地区 中国（6）
IPC部 C（6）
IPC大类 C30（6） H01（5） C01（2）
IPC小类 C30B（6）
IPC H01L021/02（4） C30B025/18（3） C30B025/16（2）
C30B029/02（2） C30B029/40（2）
发明人
公开年 2023（6）
申请年 2022（6）
专利权人

Preparing single crystal high-nickel cobalt-free material comprises e.g. mixing single crystal high-nickel cobalt-free precursor with lithium source, carrying out calcination, and mixing second single crystal high nickel cobalt free calcined material with graphene oxide solution.

LI C, YU H, XIE Y, LI A

Van der Waals epitaxy method of high-quality aluminum gallium nitride materials on amorphous substrate, comprises e.g. transferring and processing first two-dimensional material layer on amorphous substrate, transferring second material layer on processed layer, performing hydrogenation passivation.

LI D, JIANG K, BEN J, ZHANG S, CHEN Y, LYU B, SUN X

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Preparing three-dimensional homogeneous epitaxial structure used in preparation of optoelectronic device or electronic device, involves covering two-dimensional material layer on surface of nitride single crystal substrate, and processing one micro nano-scale blind hole on surface of material layer.

YAN Q, WANG G

Preparation of wafer-level self-supporting cadmium-tellurium thin film used in electronic device, involves cleaning two-dimensional material/sapphire substrate, assembling two-dimensional material/sapphire substrate and support by molten metal material, and growing cadmium telluride thin film.

WANG J, WANG X, TANG X, CAO H, BAI W

Preparing low transmission loss single crystal copper material comprises e.g. forming single crystal copper layer on substrate i.e. graphene layer surface, and peeling off single crystal copper layer from substrate in mixed gas atmosphere of argon and hydrogen.

WANG E, YUE X, HUANG Z, HE M, ZHANG Z, DING Z