国家/地区 中国（5）
IPC部 C（5）
IPC大类 C23（5） H01（2）
IPC小类 C23C（5） H01L（2）
IPC C23C016/26（5）
发明人 CHEN Z（5）
公开年 2016（2） 2017（2）
申请年 2016（5）
专利权人 SHANGHAI INS.（2）

Preparation of graphene carbon nanotubes composite film for hybrid Schottky diode, involves using substrate whose entire or one surface is graphene catalyst, performing electroplating and carrying out chemical vapor deposition.

YANG L, CHEN Z, XU X, ZHANG J, YIN L, WU H, LIAO W, LI Q, BECK T J

Growing of graphene with unbonded metal, involves depositing oxide on one surface of metal foil, defining other surface as metal surface, and stacking or rolling up metal foil on oxide surface towards metal surface.

YU G, ZHANG Y, SUI Y, CHEN Z, DENG R, GE X, LIANG Y, HU S

Non-adhesion graphene preparing metal foil layer stacking method, involves stacking layers of metal foil, separating metal foil, and utilizing chemical vapor deposition in each surface of metal foil stacked structure to prepare graphene.

ZHANG Y, YU G, SUI Y, CHEN Z, DENG R, GE X, LIANG Y, HU S

Depositing aluminum nitride film epitaxially on glass substrate involves providing monolayer graphene on temporary substrate, and transferring provided monolayer graphene on temporary substrate into glass substrate.

AN P, ZHAO L, WEI T, CHEN Z, WANG J, LI J

Growing method of aluminum nitride layer and gallium nitride layer on graphene by magnetic sputtering involves supplying hydrogen to quartz tube furnace containing clean copper tube, cooling and obtaining graphene.

CHEN Z, HAO Y, ZHANG J, LV J