国家/地区 中国（6）
IPC部 C（6） H（2）
IPC大类 C23（6）
IPC小类 C23C（6）
IPC C30B025/18（4） C23C016/02（2） C23C016/26（2）
C30B025/16（2） C30B028/14（2） C30B029/40（2）
发明人 FENG H（2） ZHANG J（2）
公开年 2022（6）
申请年 2021（6）
专利权人

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Preparing two-dimensional material heterojunction device, comprises dissociating two-dimensional material, embedding electrode to substrate by spin coating, transferring dissociated two-dimensional material and forming multi-layer heterojunction structure.

LI P, YANG Q, LIN J

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Preparation of ultrathin beta-radiation source for micro-components, involves using polymethyl methacrylate/graphene film and platinum sheet, and depositing beta-radiation source on graphene using solution of e.g. beta-radiation source.

ZHANG J, LI C, WANG X, XU P, FENG H, CHEN Z, YANG Y, WU W, ZHOU C, LUO T

Preparing one-dimensional single crystal germanium-based graphene plasmon nanostructure in e.g. mid-infrared sensing, comprises sputtering gold nano-film on substrate, and growing high crystallinity graphene shell layer on surface of germanium doped single crystal nano-wire.

WANG H, GU Y, CHANG K, CHEN K

Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing copper foil substrate, removing graphene of the copper foil substrate transferred to cleaned sapphire substrate.

HAO Y, MA P, JIAO P, WANG D, ZHANG J, FENG Q, ZHANG Y, NING J