国家/地区 中国（15）
IPC部 C（15）
IPC大类 C01（15）
IPC小类 C01B（15） C23C（15） H01L（2）
IPC C01B032/186（15）
发明人 LI Y（2） WANG X（2） ZHANG X（2）
公开年 2021（12） 2022（2）
申请年 2021（15）
专利权人

Use of nitrogen-doped graphene metal material in heat-conducting field where nitrogen-doped metal graphene comprises metal base material and nitrogen-doped graphene.

WU Q, MA Y

Graphene film preparation device useful for heating in pipe, comprises heating element, which is embedded in the quartz tube and forming heating cavity with quartz tube, the heating cavity is placed by substrate, and air supply assembly forming graphene film on the substrate.

QING F, LI X, HE Q

Composite material used for improving electroconductivity of metal, has graphene fragment layer that comprises graphene fragments uniformly spread on metal foil layer.

GONG M, SUN B, WANG Y, CHEN Q, YANG W, LI Y, LIANG J, LIU B, ZHANG X, PEI Z

Graphene cold wall growth device, has power supply whose two poles pass through two through holes of reaction chamber, where two poles of power supply are connected with upper electrode plate and lower electrode plate.

CHEN Z, JI N, SHEN C, XU S, ZHANG J

Graphene composite film comprises graphene composite film main body comprising carbon nano-tube film substrate, and copper substrate.

MAO J

Industrial mass production of vertical graphene composite carbon felt involves soaking carbon felt in acid solution, vibrating, repeatedly washing soaked carbon felt with deionized water, drying, and putting carbon felt on roller device.

QIN C, LI T, WANG Q, LOU H, SHI L, LUO L, HUANG S

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Three-dimensional integrated photo-thermal conversion material is prepared by preparing foamed nickel graphene material by chemical vapor deposition on pretreated foamed nickel substrate, and preparing nickel-graphene- molybdenum oxide by hydrothermal method.

CUI H, WEI N, ZHAO M, GONG L, XU R, LI Q