国家/地区 中国（5）
IPC部 C（5）
IPC大类 C30（5） C01（3） C23（3）
H01（3）
IPC小类 C30B（5） C01B（3） C23C（3）
H01L（3）
IPC C30B033/12（5）
发明人
公开年 2022（2）
申请年 2022（3） 
专利权人 SHANGHAI INS.（2）

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Preparing graphene single crystal comprises introducing graphite into a plasma generator reaction chamber, passing argon, oxygen or nitrogen as etching gas, utilizing radio frequency source to ionize gases and bombarding surface of graphite.

LIN S