国家/地区 中国（6）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（6）
IPC C23C014/02（6）
发明人 BOYD D A（2）
公开年 2021（2） 2022（2）
申请年 2021（3） 
专利权人 CALIFORNIA I.（2）

Preparing two-dimensional material heterojunction device, comprises dissociating two-dimensional material, embedding electrode to substrate by spin coating, transferring dissociated two-dimensional material and forming multi-layer heterojunction structure.

LI P, YANG Q, LIN J

Growing of nitride on diamond for e.g. consumer electronics, involves preparing group of diamond single crystal substrates, group(s) of diamond polycrystalline polishing substrates and material of gallium nitride/graphene/diamond.

LIANG Z, WANG Q, WANG X

Preparation of ordered chiral molecular chain on substrate used as device substrate, involves heating single crystal substrate, forming double-layer graphene on substrate, placing substrate in chamber, thermally-evaporating 2,2'-diphenylethynyl-4,4'-dibromobiphenyl molecule and depositing molecules.

PI X, WANG H, LU H

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Forming graphene involves placing a substrate in processing chamber, adding cleaning gas including hydrogen and nitrogen, and carbon source, initiating microwave plasma, and subjecting the substrate to flow of cleaning gas and carbon source.

BOYD D A, YEH N, YEH N C

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A