国家/地区 中国（6）
IPC部 C（6）
IPC大类 C30（6）
IPC小类 C30B（6）
IPC C30B029/02（6）
发明人 CHI K（2） GUO W（2） WANG S（2）
公开年 2018（3） 2020（2）
申请年 2018（6）
专利权人 UNIV HUAZHON.（2）

Preparing continuous single-layer single-crystal graphene film comprises electrochemically polishing the single crystal copper, then further performing graphene growth on the single crystal copper substrate.

WU B, ZHANG J, LIU Y

Vacuum chamber tunnel furnace and tubular linear gas supply arrangement for production of graphene single crystal film, in which copper-nickel foil moving device moves copper-nickel foil to react with deposition gas to produce graphene film.

WANG Y

Preparation of wafer-level graphene single crystal involves placing plasma-processed metal foil in reaction furnace, heating, introducing hydrogen, annealing, introducing carbon source, adjusting annealing temperature and cooling.

HUANG F, CHENG Y, BI H

Preparing single crystal graphene sheet from papermaking black liquor used in transparent conductive materials, involves performing hydrothermal carbonization of papermaking black liquor, and adjusting reaction conditions.

WANG X, DING Z, WU P, LI F, SUN R

Method for rapidly preparing large-sized single crystal graphene, involves introducing pre-configured standard mixed gas into chemical vapor deposition system, carrying out chemical vapor deposition on surface of copper foil.

WANG S, GUO W, CHI K

Preparing graphene micro-nanocrystal array involves introducing methane and oxygen on surface of copper foil by chemical vapor deposition method to prepare graphene micro-nanocrystal array where methane gas is used as graphene carbon source.

WANG S, GUO W, CHI K