国家/地区 中国（6）
IPC部 C（6）
IPC大类 C30（6） C01（3） B82（2）
C23（2）
IPC小类 C30B（6）
IPC C30B029/64（6）
发明人
公开年 2017（6）
申请年 2016（3）  2017（3） 
专利权人 UNIV PEKING（2）

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Preparing graphene single crystal film comprises laminating copper single-crystal thin film/sapphire, annealing and depositing on single-crystal thin film surface under atmospheric pressure chemical vapor deposition.

PENG H, DENG B, LIU Z

Manufacture of single crystal copper-nickel alloy for preparing multilayer monocrystalline graphene, involves carrying out nickel plating on single crystal copper foil, and annealing to obtain copper single crystal copper foil.

ZHANG Z, XU X, WU M, YU D, WANG E, LIU K

Preparation of dendritic monocrystalline graphene for e.g. sensor, involves cleaning copper foil substrate with acetic acid and acetone, pre-annealing and pre-oxidizing substrate, chemical vapor depositing and cooling substrate.

TU R, ZHANGCHI T, ZHANG S, ZHANG L

Preparing silicon carbide-graphene film with epitaxial growth involves pre-treating silicon carbide-graphene substrate by washing substrate in upward face, and putting substrate facing upward into epitaxial growth device.

LI Z

Membrane for providing selective permeability in filtration applications, comprises sheet of graphene-based material having perforations with specified pore size, non-graphenic carbon-based material, and contact areas between materials.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M, BULLOCK S E, LIU H, SINSABAUGH S L