国家/地区 中国（24）
IPC部 C（24）
IPC大类 C30（24）
IPC小类 C30B（24）
IPC C30B029/02（16） C30B025/18（11） C23C016/26（6）
C01B031/04（4） C30B025/00（3） C30B029/60（3）
C01B032/184（2） C23C014/06（2） C23C014/34（2）
C23C016/02（2） C23C028/00（2） C30B007/10（2）
C30B007/14（2） C30B025/02（2） C30B029/36（2）
发明人 ZHANG Z（5） XU X（4） LIU K（3）
REN H（3） TAN G（3） XIA A（3）
ZHAO C（3） CHEN X（2） LI Y（2）
WANG E（2） XU J（2） YU D（2）
ZHANG J（2） ZHANG X（2）
公开年 2016（24）
申请年 2016（17）  2015（5）  2014（2） 
专利权人 UNIV PEKING（4） UNIV SHAANXI.（3）

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Preparation method of graphene nanobelts, involves heat-treating dried linear nano-crystals.

YU G, XU J, ZHANG J, WANG H

Preparation of single-crystal silicon carbide/graphene composite nanofiber used in e.g. nano optoelectronic device, involves heating silicon carbide nanofibers, vacuumizing with vacuum pump, and removing silicon from nanofibers.

CHEN J, DING L

Direct preparation of graphene/metal or alloy composite material comprises e.g. placing metal or alloy in constant temperature heating area of chemical vapor deposition reaction furnace quartz tube and vacuumizing, inletting protective gas.

FU L, GU J, PANG A, ZHANG X

Preparation of graphene-modified single crystal copper, involves heating and melting crude copper in protective atmosphere to obtain copper solution, introducing copper liquid into mold, heating, adding graphene powder, stirring and cooling.

SUN X, YAO Y

Preparation of AB-stacked bilayer graphene involves performing chemical deposition on copper foil using solid or liquid hydrocarbon as carbon source, and controlling volatilization of carbon source using inert carrier gas.

WU J, WAN J, SONG L, PAN D, LI Y

Preparation of large size single crystal graphene, involves using making copper foil into cavity structure, heat-treating copper cavity with hydrocarbon as carbon source and growing large size single crystal graphene.

BAI X, CAO S, CHEN X, GUO L, WANG L

Method of growing graphene on silicon substrate by using silicon carbide substrate chip, putting into graphite crucible, adding carbon or silicon, covering, heating, carrying out hydrogen corrosion, and forming silicon carbide structure.

CHEN X, XU X, ZHAG F, ZHAO X, ZHANG F

Preparation of two-dimensional tin graphene material involves carrying out epitaxial growth of monolayers or multi-atomic layer of (alpha)-tin crystal thin film on single crystal substrate and electron bombardment using atoms and ions.

LI Y, SONG Y, WANG S, ZHANG Z, ZHANG L

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F