国家/地区 中国（11）
IPC部 C（11）
IPC大类 C01（11） B01（2） H01（2）
IPC小类 C01B（11）
IPC C01B031/04（10）
发明人 WANG C（11）
公开年 2014（4） 2016（4） 2015（3）
申请年 2014（11）
专利权人 SINOPEC CORP（4） SINOPEC SHAN.（4）

Production of sulfur-doped graphene, used in industrial field, involves carrying out ultrasonic peeling of graphite oxide in solvent and obtaining graphene oxide solution which is mixed with sulfur-containing organic compounds.

GAO H, JIA Y, LIU Z, SHI Z, WANG C

Synthesizing sulfur-doped graphene comprises ultrasonically peeling the graphite oxide in a solvent, mixing the graphene oxide solution and sulfur-containing organic compounds with ultrasonicating, dispersing and uniformly mixing.

GAO H, JIA Y, LIU Z, SHI Z, WANG C

Preparation of sulfur-doped graphene, involves mixing graphite oxide in water, obtaining graphene oxide solution, mixing with sulfur-containing compounds, ultrasonically processing, mixing, and hydrothermally reacting.

GAO H, JIA Y, LIU Z, SHI Z, WANG C

Synthesis of sulfur-doped graphene comprises taking graphite oxide in water, ultrasonically peeling off, freeze-drying, mixing with hydrogen sulfide and inert gas, and reacting.

GAO H, JIA Y, LIU Z, SHI Z, WANG C

Preparation of amorphous silicon graphene-like nanosheet used as semiconductor material for photocatalytic hydrogen production involves mixing magnesium powder and silica, air sintering in the presence of hydrogen/argon gas and pickling.

HU B, MENG Y, SHI W, YAN Y, LIU J, WANG C, CAI F

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Reduced graphene oxide/copper nanocomposite powder is obtained by reducing graphene oxide, sensitizing, activating, supporting copper uniformly on graphene, and obtaining powder having copper uniformly supported on graphene sheet layer.

HUANG J, LI M, JIANG X, LUO G, SHEN Q, WANG C, ZHANG L

Transferring graphene thin film on metal substrate comprises orderly forming graphene thin film, organic polymer protection layer and polymer support layer on metal surface, peeling the film and then bonding to metal surface.

YANG L, CAI W, FANG X, WANG C, CHEN X

Preparation of activated carbon/graphene composite material comprises mixing biomass, carbon nitrogen compound and transition metal-containing compound, and heating under protective gas atmosphere.

DENG Q, LI P, WANG S, WANG C, ZHANG W, KONG C

Producing nitrogen-doped graphene, useful in optical and/or electrical devices, comprises coating carbon and nitrogen sources on a surface of copper catalyst and then introducing into a non-oxidizing gas reactor and reacting the mixture.

HE B, YAN S, WANG C