国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/186（3）
发明人 TAN H（6）
公开年 2017（6）
申请年 2016（5） 
专利权人 WUXI GRAPHEN.（6） WUXI SIXTH E.（3）

Device used e.g. for etching continuous substrate and graphene comprises feeding and etching device.

ZHANG H, LI T, TAN H

Laser donor film used for transferring graphene thin film comprises base film, laser heat transfer layer and adhesive layer, where base film is used as carrier film for laser heat transfer layer, and adhesive layer.

YANG J, TAN H

Preparing and processing graphene film involves utilizing processing solution of graphene film substrate in water or ethanol solution of dopamine hydrochloride at certain concentration.

QIN X, YANG J, TAN H

Growth substrate for preparing three-dimensional graphene film, comprises metal foil, and metal mesh which are alternately stacked together.

WANG W, TAN H

Removing impurities from grown graphene, comprises e.g. binding a graphene surface in graphene/metal substrate/retained graphene grown by chemical vapor deposition, together with film-containing film, and polishing the metal substrate.

ZHANG H, WANG W, TAN H

Cooling wall furnace useful for preparing graphene by chemical vapor deposition method, comprises sequentially connected injection chamber, process chamber and sample chamber.

SHEN D, LIU H, TAN H