国家/地区 中国（21）
IPC部 C（21）
IPC大类 C01（21） G01（8） B82（3）
C03（3） H01（3） C23（2）
IPC小类 C01B（21）
IPC C01B032/186（21）
发明人 GAO X（21）
公开年 2021（6） 2018（5） 2020（5）
申请年 2019（6）  2020（5）  2018（4）  2016（2） 
专利权人 UNIV HARBIN .（9） BEIJING GRAP.（4） CHINESE ACAD.（2） SAURER JIANG.（2）

Preparing graphene powder used as additive material in field field-effect transistor integrated circuit, single molecule detector and transparent conductive film, involves using chemical vapor deposition process to grow graphene on the mixture of magnesium oxide powder and copper powder.

ZHUANG Y, GAO X, FU X, LI L, YANG Q, WANG Y, ZHANG L

Carrier for batch preparation of graphene film comprises supporting plates for placing substrate for growing graphene, heating plates for heating substrate, and electrode assembly connected with heating plates.

ZHU Y, MA Z, GAO X, SHAN J, JIA K, PENG H, LIU Z

Method for preparing graphene wafer in batches using carrier, involves using chemical vapour deposition process to prepare graphene film on substrate, in which angle between gas flow direction and substrate is provided with specified value.

LIU Z, JIANG B, GAO X

Synthesis of indium sulfide nanosphere/graphene foam composite material comprises chemical vapor deposition, and hydrothermal synthesis.

YUE H, GUO X, GAO X

Synthesis of indium sulfide nanosphere/graphene foam composite material comprises chemical vapor deposition, and hydrothermal synthesis.

YUE H, GUO X, GAO X

Preparing indium sulfide nanosheet array/foamed graphene electrode as working electrode, by synthesizing indium sulfide nanosheet array/foamed graphene composite material.

YUE H, GUO X, GAO X

Preparing large-size clean graphene material used for optoelectronics, by growing graphene layer on surface of metal substrate, forming metal layer on graphene layer, forming photoresist layer, and adhering glue-containing soft film.

GAO X, FENG Z, YU C, HE Z, LIU Q, GUO J, ZHOU C

Preparation of graphene-based composite material used for preparation of cathode material for lithium battery by mixing manganese salt, urea and diethylene glycol containing polyvinylpyrrolidone, and hydrothermally reacting.

LIU F, GAO X, ZHANG B, LI J, LIU T

Preparing silicon carbide-based twisted multilayer graphene material involves growing graphene materials on silicon carbide substrates, taking hydrogen as carrier gas and introducing gaseous carbon source to grow.

LIU Q, YU C, HE Z, GAO X, GUO J, ZHOU C, FENG Z

Continuous production system of graphene glass comprises conveying device carry glass substrate to move between backup unit, reaction unit and sampling unit, first valve arranged between backup unit and reaction unit.

GU W, ZHENG K, LIU B, GAO X