国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7） C23（7） B82（4）
H01（3） B01（2） C30（2）
IPC小类 C01B（7）
IPC C23C016/02（7）
发明人
公开年 2013（4） 2015（2）
申请年 2013（7）
专利权人

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Applying graphene coating to a substrate containing iron or aluminum, comprises providing metallic layer on a surface of substrate, and contacting metallic layer with a source of carbon atoms to provide a graphene coating on metallic layer.

KINLOCH I, LEWIS A, KING M, LEVIS A

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Preparing graphene for photovoltaic cells involves annealing catalyst substrate in hydrogen gas within chemical vapor deposition chamber at atmospheric pressure and exposing it to gas mixture of hydrocarbon/hydrogen having specific pressure.

VLASSIOUK I V, SMIRNOV S N, PETER W H, SABAU A S, DAI S, FULVIO P F, IVANOV I N, LAVRIK N V, DATSKOS P G