国家/地区 中国（6）
IPC部 C（6）
IPC大类 C30（6） C23（3） H01（2）
IPC小类 C30B（6）
IPC C30B025/18（6）
发明人 SUN L（2）
公开年 2014（3） 2015（2）
申请年 2014（6）
专利权人 UNIV SHANDON.（2）

Method for preparation of epitaxial silicon carbide-graphene composite film, involves pre-treating substrate in chemical vapor deposition chamber, growing silicon carbide epitaxial layer, heating, decomposing and recombining structure.

ZHANG B, ZHANG X, ZHANG Z

Method for growing graphene in sides of silicon carbon surface, involves connecting pneuma source with single crystal growing furnace, and reducing heating temperature of furnace to room temperature.

CHEN X, SUN L, XU X, YANG Z, ZHAO X

Method for preparing liquid copper substrate utilized for preparing large single crystal graphene in field effect transistor device, involves placing solid copper on copper-tungsten alloy substrate, and heating in hydrogen atmosphere.

LIU Y, WU B, WANG L, YU G, CHEN J

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

Stripping graphene thin film involves utilizing surface graphene thin film with substrate, growing graphene film directly on substrate or epitaxially growing material, and peeling off epitaxial material to obtain desired product.

DUAN R, LI J, SUN L, WANG G, WANG J, WEI T, ZHAO Y

Gallium nitride crystals preparation involves preparing graphene nanosheet and dispersing nanosheet in solution of N,N-dimethylformamide or N-methyl pyrrolidone to obtain oxidized graphene nanosheet, which is later dispersed in water.

TIAN Y, WU Y, LI X, ZHANG L, DAI Y, SHAO Y, HAO X, HUO Q