国家/地区 中国（5）
IPC部 B（5）
IPC大类 C30（5） C01（4） C23（4）
B82（3） H01（3）
IPC小类 C30B（5）
IPC C01B031/04（4） C30B029/02（4） B82Y040/00（3）
C23C016/26（3） B82B003/00（2） B82Y030/00（2）
C01B031/02（2） C01B032/182（2） C01B032/186（2）
C01B032/188（2） C23C016/02（2） C23C016/44（2）
C30B001/02（2） C30B025/18（2）
发明人
公开年 2015（5）
申请年 2014（3） 
专利权人

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Iron-based carbide nanocrystals-graphene nanobelt composite material used in e.g. hydrogen evolution catalysis, comprises bottom layer of silicon wafer, graphene nanobelt arrays on silicon wafer, and iron-based carbide nanocrystal.

DONG J, FAN X, GUO X, LIU B, LI C, LIU Q