国家/地区 中国（7）
IPC部 C（7）
IPC大类 C04（7）
IPC小类 C04B（7）
IPC C23C016/02（3） B82Y040/00（2） C01B021/064（2）
C01B031/04（2） C01B032/05（2） C04B035/52（2）
C04B035/622（2） C04B041/00（2） C04B041/87（2）
C30B029/02（2） C30B035/00（2）
发明人
公开年 2021（4）
申请年 2020（3）  2021（2） 
专利权人

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Preparation of graphite thermal field material surface-coated with tantalum carbide coating for high temperature third-generation semiconductor crystal growth furnace, involves high-pressure water treating graphite surface, plasma spraying tantalum powder, infiltrating graphite, and carbonizing.

TANG B, WU X

Sp2-sp3 hybrid crystalline boron nitride has basic structural unit composed of sp2 hybridized graphite-like structural unit and sp3 hybridized diamond-like structural unit, where the two types of units are connected via coherent interface.

ZHAO Z, LUO K, SUN L, LIU B, HU W, HE J, YU D, TIAN Y, XU B, LIU Z, ZHAO Z S, HU W T, HE J L, YU D L, TIAN Y J, LIU Z Y

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M

Graphene-reinforced silicon carbide heating rod comprises silicon carbide, graphene oxide boron, boron carbide, surfactant and binder in cold area and silicon carbide, boron carbide, surfactant and binder in hot zone.

SHEN L, DAI P, JI C, WANG Y

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X