国家/地区 中国（8）
IPC部 F（8）
IPC大类 F25（8）
IPC小类 F25B（8）
IPC F25B021/02（7）
发明人 TANG Y（7） YU H（7） SUN Y（2）
ZHU K（2）
公开年 2016（4） 2015（3）
申请年 2015（8）
专利权人 TANG Y（7） YU H（7）

Adsorption material used in heat pump for adsorbing/desorbing refrigerant, comprises graphene scroll of graphene sheet wrapping along axis, and modifier grafting on interlayer and outside of graphene scroll and containing hydrophilic group.

LEE J, HUANG C, KANG Y, JENG M, PENG S, LI J, HUANG Q, ZHENG M, LEE J H, HUANG C Y, JENG M S, PENG S L

Semiconductor heating plate, has main body provided with heat radiator and cold side heat, metal conductor electrically connected with power supply, and N type semiconductor and P type semiconductor fixed with uniform graphene.

MA D, SUN Y, TANG Y, YU H, ZHANG M

Open cooling device, has table whose lower part is connected with refrigerating sheet that is connected with power supply, and uniform graphene layer formed between N-type semiconductor and P-type semiconductor.

SUN Y, TANG Y, YU H, YU J, ZHU K

Refrigeration device has P type semiconductor that is set with graphene layer or N-type semiconductor and P type semiconductor which is set with uniform graphene.

TANG Y, TIAN Z, WANG Y, YU H, ZHU K

Semiconductor refrigerator and water heater integrating device, has semiconductor heating plate hot end formed with heating cavity, and graphene layer arranged between N-type semiconductor and P-type semiconductor.

TANG Y, YU H

Semiconductor heating plate, has power supply unit connected with metal conductor, N-type semiconductor and P-type semiconductor that are connected with graphene unit, and heat radiator formed with heat radiator graphene layer.

TANG Y, YU H

Open cooling device, has power supply unit connected with electrodes, and N-type semiconductor formed with graphene layer, where P-type semiconductor and N-type semiconductor are formed with uniform graphene unit.

TANG Y, YU H

Cooling device, has graphene layer fixed with P-type semiconductor, and heat conductor connected with heat radiating sheet, where P-type semiconductor is connected with N-type semiconductor that is fixed with graphene layer.

TANG Y, YU H