国家/地区 中国（5）
IPC部 H（5）
IPC大类 H01（5）
IPC小类 H01L（5）
IPC H01L021/336（4） H01L029/06（4） H01L029/66（4）
H01L029/78（4） H01L021/76（3） H01L029/16（3）
H01L029/24（3） H01L029/423（3） H01L029/786（3）
H01L021/02（2） H01L021/34（2） H01L021/768（2）
H01L021/8234（2） H01L027/088（2） H01L029/08（2）
发明人 CHENG C（2） KHADERBAD M A（2） MA H（2）
SATHAIYA D M（2） SHEN T（2） SHEN Z（2）
ZHENG Z（2）
公开年 2021（4）
申请年 2021（3） 
专利权人 TAIWAN SEMICONDUCTOR MFG CO LTD（5）

Method for forming semiconductor device, involves configuring gate structure, source and drain components, semiconductor structure and two-dimensional material layer, and utilizing semiconductor structure and two-dimensional material layer as channels between source and drain components.

SHEN Z, KHADERBAD M A, MA H, SATHAIYA D M, ABHIJITH K M, SHEN T, DHANYAKUMAR S M

Method for forming fin-type field effect transistor device, involves forming convex dielectric fin over substrate, forming channel layer on upper surface of dielectric fin along wall of dielectric fin, and forming channel enhancement layer.

HUNG Y, ZHENG Z, CHEN Z, JIANG H, LI L, CHIANG H, CHEN T, CHENG C, HONGITISE, CENTISEAN, RELANEBELL

Semiconductor device e.g. integrated circuit has layer of deposited capacitor material (DCM) which is set over channel region, dielectric layer that is set over DCM layer, and metallic gate electrode layer which is set over dielectric layer.

HUANG W, TSAI C, CHENG K, WANG C, CAI Q, CHENG G, WANG Z, WANGCHUN H, WANG C H, CHENG K L, TSAI C W, HUANG W C

Semiconductor device comprises gate structure above channel element comprising channel layer containing silicon, germanium or semiconductor elements, and channel layer containing two-dimensional material.

KHADERBAD M A, MA H, LIN G, SHEN Z, SATHAIYA D M, LIN K, SHEN T, KARDERBARTMURUNALAPJIT, SATAYYADANYAKUMAHAVIER, SENSORMIN, DHANYKUMAR S M

Capacitor for semiconductor device, has dielectric sheet arranged over first graphene structure, and second graphene structure provided on dielectric sheet and comprising multiple graphene layers.

JOU C, KO C, CHIU P, CHENG C, LU C, CHEN H, HSUEH F, HUANG C, JOU C P, KO C H, CHIU P W, CHENG C C, LU C C, HUANG C F, CHEN H N, HSUEH F L, HUANG Q, KE Z, QIU B, XUE F, ZHOU C, ZHENG Z, LV Z, WANN C H