国家/地区 欧洲专利局（EPO）（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7） C23C（7） B01J（2）
H01M（2）
IPC C01B032/182（7）
发明人 BEDWORTH P V（2） HEISE S E（2） SINTON S W（2）
SWETT J L（2）
公开年 2017（7）
申请年 2016（4）  2017（3） 
专利权人 LOCKHEED MAR.（2）

Apparatus for continuous production of graphene, has rotatable substrate which is included with endless rotatable surface comprising material for accepting deposition of primary carbon layer prior to graphene growth.

ANDREASSEN JAKOBSEN M, DATSYUK V, JAKOBSEN M A

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Chemical vapor deposition process for forming foam-like structure, involves causing decomposition of organometallic compound vapor into metal particles, and precursor gasses into graphene domains and/or hexagonal-boron nitride domains.

LOEBLEIN M, TSANG S H, TEO H T E, TSANG S, ZHANG H

Preparation of nanoparticles/porous graphene composite used as electrode in batteries, involves dispersing graphene structures into solvent, adding nanoparticles precursors to dispersion and treating resultant precursor mixture.

XU J

Preparing deposited graphene used as genosensor, comprises heating metal substrate and carbon source in sealed ambient environment, maintaining temperature and time sufficient to form graphene lattice and then cooling substrate.

SEO D H, PINEDA S, HAN Z J, OSTRIKOV K

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Perforated sheet of graphene-based material having an area, comprises perforated single layer of graphene and many perforations in single layer of graphene located over the area of the single layer of graphene.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M