国家/地区 日本（5）
IPC部 B（5）
IPC大类 B01（5）
IPC小类 B01J（5）
IPC C01B031/02（5） C01B031/04（4） B01J023/755（2）
B82Y030/00（2） B82Y040/00（2） C23C016/26（2）
发明人
公开年 2013（2） 2014（2）
申请年 2012（5）
专利权人

Graphene oxide useful in graphene-polymer composite used in coating liquid, for coating steel sheet.

YOO H, KIM J, JUNG Y, YOO H J, KIM J K, JUNG Y G, KIM J S, LIU H

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G