国家/地区 韩国（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC G03F001/62（5） C01B032/184（3） B01J019/08（2）
C01B032/194（2） G03F001/22（2）
发明人 KIM K S（2） LEE S Y（2）
公开年 2022（4）
申请年 2022（5）
专利权人

Pellicle used for reticle for extreme-UV exposure, comprises pellicle film through which extreme-UV rays transmit and support frame for supporting pellicle film, where pellicle film comprises multilayer thin film structure.

KIM Y H, KIMYONGHWAN

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Manufacturing graphene thin film for pellicle material using ozone gas useful in semiconductor devices comprises forming graphene on the upper surface of substrate, exposing graphene layer to ozone, and heat-treating and etching.

LEE G H, KWON Y, WOOK Y B, MOON S I, MOON J, KIM K S, LEE S M

Pellicle film used for extreme UV lithography, comprises boron nitride nanostructure layer.

CHOI J H, CHO S J, YU L, KIM C, LEE S Y, SEO K W, KIM K S, MOON S Y, KIMCHUNG, SEO K