国家/地区 波兰（7）
IPC部 B（7）
IPC大类 B82（7）
IPC小类 B82Y（7）
IPC B82Y040/00（7）
发明人 CIOCHON P（2） KOLODZIEJ J（2）
公开年 2021（2）
申请年 2019（2） 
专利权人 MATERIALOW E.（2） UNIV JAGIELL.（2）

Production of micro/mesoporous conductive polymer involves adding aqueous suspension of graphene oxide to hydrazine, vigorously stirring at room temperature, filtering obtained gelling product, drying, and annealing under atmosphere of hydrogen at preset pressure.

KULA P, NIEDZIELSKI P, KACZMAREK L, SZYMANOWSKI H, KACZOROWSKI W, JASTRZEBSKI K, CLAPA M, ZAWADZKI P, WARGA T, KLICH M

Manufacture of graphene roses involves homogenizing and ultrasonically processing aqueous solution of graphite or graphene plates and water in ultrasonic bath, adding sodium hydroxide, mixing, ultrasonically processing and heating.

KAMEDULSKI P, ZIELINSKI W, LUKASZEWICZ J P, NOWAK P

Obtaining a silicon carbide (SiC)-graphene surface composite with controlled surface morphology for use in e.g., electronics by subjecting SiC substrate, after initial preparation, to annealing in beam of silicon atoms and cooling.

CIOCHON P, KOLODZIEJ J

Manufacture of graphene flakes involves purging reduced graphene oxide with inert gas, and carrying out thermal reduction by rapidly heating to preset temperature.

FRYCZKOWSKI R, SIERADZKA M, JANICKI J

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Chemical reduction of graphene oxide useful in industrial application for its increased electrical conductance involves using hypophosphorous acid and/or hypophosphite ions as reducing agents and sulfur dioxide, sulfurous acid as catalyst.

LIPINSKA L, JAGIELLO J, KOZINSKI R, BATIJEWSKI R, NAJDEKER E

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O