国家/地区 罗马尼亚（7）
IPC部 C（4） B（2） G（2）
H（2）
IPC大类 C01（3） G01（2） H01（2）
IPC小类 C01B（3） H01G（2）
IPC C01B032/182（2）
发明人 BANCIU C A（2） BARA A（2） MARINESCU V E（2）
公开年 2020（7）
申请年 2018（5）  2019（2） 
专利权人 INST NAT CER.（2） INST NAT CER.（2）

Method for preparing hybrid composite material of zinc oxide and three-dimensional graphene network, for manufacturing electrodes for energy storage and conversion device, involves growing zinc oxide nano/microparticles on graphene surface.

BANCIU C A, BARA A, CHITANU E, ION I, TEISANU A A, MARINESCU V E

Producing nitrogen-doped graphene nanocomposite material for producing electrode, by mixing graphene oxide with ethanol as reducing agent and ammonia or urea as nitrogen precursor, and subjecting mixture to microwave field.

MARINOIU T A, CARCADEA E, RACEANU M, CAPRIS I, VARLAM M

Chemiresistive ethanol sensor has sensitive layer which contains sono-chemically processed ZnO and graphene nanocomposites and deposited over interdigitated zone and platinum resistor heats sensitive layer and temperature sensor.

COBIANU C, SERBAN B C, BUIU O, DUMBRAVESCU N, MARINESCU M R, IONESCU O, AVRAMESCU V M

Preparing graphene material used for supercapacitor, involves scraping paste comprising reduced graphene oxide and conductive carbon black, mixing with binder, drying and depositing conductive layer of polypyrrole by electropolymerization.

BARA A, BANCIU C A, IORDOC M N, PRIOTEASA P I, MARINESCU V E

Preparing composite material based on reduced graphene oxide derivative/copper gallium dioxide by adding graphene oxide to autoclave with copper and gallium precursors and adopting hydrothermal method to form semiconductor material.

URSU D H, MICLAU M N, BANICA R

Dual composite cement composition used in dentistry, comprises organic matrix, hybrid inorganic filler, camphorquinone, dimethylaminoethyl methacrylate, graphene oxide, hydroxyapatite, bioactive glass, quartz and benzoyl peroxide.

SAROSI L C, PRUNEANU S M, ROSU M C, MOLDOVAN M, PREJMEREAN C A, PRODAN D, SILAGHI D L

Producing pressure sensor by depositing silicon oxide layer on silicon wafer surface, depositing chromium/gold layer, penetrating metal and oxide layers, nanostructuring silicon, depositing aluminum film on wafer and transferring graphene.

AVRAM M A, AVRAM M, TINCU B C, VOITINCU C, TUCUREANU V, MATEI A, BURINARU T A, MARCULESCU C V