国家/地区 中国（8）
IPC部 B（8）
IPC大类 B82（8） C01（8） C23（2）
IPC小类 B82Y（8）
IPC C01B031/04（8） B82Y040/00（7） B82Y030/00（3）
发明人 FAN S（8）
公开年 2013（8）
申请年 2012（8）
专利权人 HON HAI PREC.（8） HONGFUJIN PR.（8） UNIV TSINGHU.（8）

Epitaxial structure used in light emitting device e.g. LED based on group III-V nitride semiconductor e.g. gallium nitride, comprises substrate, epitaxial layer disposed on substrate, and graphene layer disposed between substrate and layer.

WEI Y, FAN S

Making strip shaped graphene layer used on semiconductor devices involves providing graphene film on metal substrate; adhering nanotube structure with strip-shaped gap on graphene film; applying voltage to nanotube graphene structure.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer involves disposing carbon nanotube structure comprising drawn carbon nanotube film including carbon nanotubes on graphene film; removing graphene film and carbon nanotube structure.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer involves providing graphene film on surface of substrate; drawing carbon nanotube film comprising carbon nanotube segments; disposing carbon nanotube composite on the film; applying voltage; and etching.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer used as conductive layer in semiconductive device, comprises making drawn carbon nanotube film, disposing carbon nanotube composite, removing polymer material and etching nanotube segment and graphene film.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer, comprises providing graphene film on substrate surface, disposing carbon nanotube structure on film, removing parts of film exposed by the strip-shaped gap by reactive ion etching, and separating.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer used in semiconductor devices e.g. sensor, involves providing carbon nanotube structure comprising film on substrate surface, implanting carbon ions into substrate, and annealing substrate to obtain layer.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer, used as conductive layer in semiconductor devices, comprises e.g. disposing catalyst material on a surface exposed out of strip-shaped gaps of carbon nanotube structure, and removing nanotube structure.

LIN X, JIANG K, FAN S