国家/地区 台湾（5）
IPC部 B（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B031/04（5） C23C016/26（4） B82Y030/00（2）
B82Y040/00（2） C01B031/02（2） C01B032/186（2）
C23C016/02（2）
发明人
公开年 2014（2） 2015（2）
申请年 2013（5）
专利权人

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Transferring graphene layer, comprises executing electrostatic process to surface of substrate, electrostatically adsorbing graphene layer formed on metal carrier layer onto substrate, and immersing substrate into etching solution.

CHEN C, WANG D, HUANG I, CHEN C W, CHEN C C, WANG D Y, HUANG I S

Graphene manufacturing system, useful for growing graphene layers on insulated surface of work piece, comprises furnace body having working chamber, catalyst source, hydrogen source, and carbon feedstock source.

TENG P, CHIU P, LU C, TENG P Y, CHIU P W, LU C C

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A