国家/地区 台湾（12）
IPC部 C（12）
IPC大类 C01（12）
IPC小类 C01B（12）
IPC C01B031/02（12）
发明人 MUELLEN K（6） FENG X（5） MULLEN K（5）
MILLEN K（4） SCHWAB M G（4） SCHWAB M G S（4）
CAI J（2） FASEL R（2） HINTERMANN T（2）
NARITA A（2） RUFFIEUX P（2） SCHVAB M G（2）
TSAI J（2）
公开年 2013（6） 2014（3） 2015（3）
申请年 2013（7）  2012（4） 
专利权人 BASF SE（7） BASF CHINA C.（6） MAX PLANCK G.（6） BASF AG（3）
BASF SCHWEIZ.（2）

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Purifying graphene nanoribbons, involves contacting composition comprising graphene nanoribbons and contaminants with liquid medium comprising dispersant, and dispersing nanoribbons in liquid medium and subjecting the dispersion.

HINTERMANN T, SCHWAB M G, CHA K C, WEITZ T, SCHAEFER A, MUELLER I B, WEITZE T, SCHWAB M G S, CHA K C P

Manufacture of functionalized graphene used for e.g. barrier material, involves forming mixture using graphite oxide, solvent and functionalized compound containing sulfur and amino group, reacting, and recovering resultant graphene.

LEE J S, DO SEUNG H, JEON S Y, HAN G W, KONG J H, DO S H, LEE J, DO S, JEON S, HAN G, KONG J

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

New oligophenylene monomer useful in polymeric precursor for preparing graphene nanoribbons that used are in thin film semiconductor of electronic, optical, or optoelectronic device e.g. organic field effect transistor device.

MUELLEN K, FENG X, CAI J, RUFFIEUX P, FASEL R, NARITA A, TSAI J, MULLEN K, MILLEN K

Graphene nanoribbon used for e.g. spintronic device, contains repeating unit having modification(s) chosen from heteroatomic substitution, vacancy, stone-wales defect, inverse stone-wales defect, and hybridized carbon network.

FASEL R, RUFFIEUX P, MUELLEN K, CAI J, FENG X, BERGER R, TSAI J, CAI Y, MULLEN K, MILLEN K

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

New oligophenylene monomer useful for preparing a polymeric precursor for producing graphene nanoribbons useful in an electronic, optical, or optoelectronic device.

SCHWAB M G, NARITA A, FENG X, MUELLEN K, MULLEN K, SCHWAB M G S, SCHVAB M G, MILLEN K

New graphene nanoribbon precursors comprising polycyclic aromatic hydrocarbon repeat units, used in graphene nanoribbons for field-effect transistors.

SCHWAB M G S, MUELLEN K, FENG X, DOESSEL L, SCHWAB M G, MULLEN K, DOSSEL L, SCHVAB M G