国家/地区 台湾（40）
IPC部 B（40）
IPC大类 C01（40） B82（37） H01（20）
C23（9） B01（7） B32（6）
C07（6） C25（6） B05（4）
C08（4） B21（2） C02（2）
C22（2） D01（2） G03（2）
IPC小类 C01B（40）
IPC C01B031/04（40）
发明人 FAN S（8） JIANG K（7） LIN X（7）
FENG X（6） MUELLEN K（6） MULLEN K（6）
NOMOTO K（4） GUO J（3） GUO J W（3）
HE X（3） LI J（3） LI J J（3）
LI W（3） MILLEN K（3） REN J（3）
公开年 2013（40）
申请年 2012（28）  2013（7）  2011（5） 
专利权人 HON HAI PREC.（11） HONGFUJIN PR.（11） UNIV TSINGHU.（11） SEMICONDUCTO.（6）
BASF SE（5） MAX PLANCK G.（5） BASF AG（4） BASF CHINA C.（4）
JX NIPPON MI.（3） NIPPON MININ.（3） EMPA MATERIA.（2） FENG X（2）
NIPPON MININ.（2） NOMOTO K（2） TODORIKI H（2） TOKYO ELECTR.（2）

Graphene powder for preparing lithium ion battery electrode, comprises compound having catechol group that adsorbs on graphene, e.g. catechol, dopamine hydrochloride, 3,4-dihydroxyphenylalanine, noradrenalin, and caffeic acid.

SUN P, LIU G, WU Z, WU G, TAMAKI E, KUBOTA Y

Graphene nanoribbon used for e.g. spintronic device, contains repeating unit having modification(s) chosen from heteroatomic substitution, vacancy, stone-wales defect, inverse stone-wales defect, and hybridized carbon network.

FASEL R, RUFFIEUX P, MUELLEN K, CAI J, FENG X, BERGER R, TSAI J, CAI Y, MULLEN K, MILLEN K

Fabricating graphene comprises inserting first electrode that is graphite multilayer material and second electrode into electrolyte without contacting, producing potential difference and permitting liquid to enter into first electrode layer.

LING Y, WANG C, LIU J, LING Y C, WANG C P, LIU J Y

Composite structure, useful for a transparent electrode in display panels of mobile phones and tablet personal computers, comprises nanofiber substrate, graphene layer disposed on a surface of a net structure and organic compound.

MA C M, HUANG Y, YANG S, TIEN H, MA M C, WANG N

Epitaxial structure used in light emitting device e.g. LED based on group III-V nitride semiconductor e.g. gallium nitride, comprises substrate, epitaxial layer disposed on substrate, and graphene layer disposed between substrate and layer.

WEI Y, FAN S

Making strip shaped graphene layer used on semiconductor devices involves providing graphene film on metal substrate; adhering nanotube structure with strip-shaped gap on graphene film; applying voltage to nanotube graphene structure.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer involves disposing carbon nanotube structure comprising drawn carbon nanotube film including carbon nanotubes on graphene film; removing graphene film and carbon nanotube structure.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer involves providing graphene film on surface of substrate; drawing carbon nanotube film comprising carbon nanotube segments; disposing carbon nanotube composite on the film; applying voltage; and etching.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer used as conductive layer in semiconductive device, comprises making drawn carbon nanotube film, disposing carbon nanotube composite, removing polymer material and etching nanotube segment and graphene film.

LIN X, JIANG K, FAN S

Making strip shaped graphene layer, comprises providing graphene film on substrate surface, disposing carbon nanotube structure on film, removing parts of film exposed by the strip-shaped gap by reactive ion etching, and separating.

LIN X, JIANG K, FAN S