国家/地区 美国（95）
IPC部 B（95）
IPC大类 C01（95）
IPC小类 C01B（95）
IPC C01B032/194（95）
发明人 JANG B Z（6） TAMAKI E（4） ZHAMU A（4）
CHOI J（3） HONG B H（3） HUI H B（3）
KAWASAKI M（3） KIM H（3） KIM H K（3）
AKSAY I A（2） BAE S K（2） BIENER M M（2）
CHOI J Y（2） GANG B S（2） GEUN K H（2）
公开年 2017（18） 2015（14） 2021（12） 2013（11） 2016（8） 2022（6） 2012（5） 2014（5） 2018（5） 2011（4） 2009（2） 2020（2） 2023（2）
申请年 2015（13）  2016（13）  2013（11）  2014（10）  2020（8）  2012（7）  2017（7）  2021（7）  2011（6）  2022（5）  2009（2）  2010（2）  2019（2） 
专利权人 NANOTEK INST.（6） SAMSUNG ELEC.（4） TORAY IND IN.（4） EMPIRE TECHN.（3）
HANWHA TECHW.（3） SAMSUNG TECH.（3） UNIV NORTHWE.（3） AKSAY I A（2）
CHOI J（2） CORNING INC（2） GLOBAL GRAPH.（2） GRAFOID INC（2）
GRAPHENE SQU.（2） HANWHA AEROS.（2） HONG B H（2） JANG B Z（2）
KORKUT S（2） LAWRENCE LIV.（2） LG CHEM LTD（2） SEMICONDUCTO.（2）

Preparing reduced acylated graphene oxide used in electrode active material of lithium secondary battery, involves subjecting graphene oxide to acylation reaction to prepare acylated graphene oxide, and reducing the acylated graphene oxide.

KIM D H, PARK S, YEON S, SHIN K, JIN C, HWANG S H, SEUNGHAE H, JIN C S, HEE S K

Manufacturing electrostatic self-assembled silicon/reduced graphene oxide (rGO)/carbon nanofibers composite as anode materials for lithium-ion battery, involves obtaining silicon (Si)-(3-aminopropyl)triethoxysilane (APTES) solution by adding predetermined silicon nanoparticles to piranha solution.

CONG R, LEE C S, LEECHANGSUP, FEMALE T

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Transferring one or more nanostructures from one substrate to another substrate by applying coating of crosslinkable copolymer over one or more nanostructures on surface of substrate, heating, transferring nanostructures and copolymer onto another substrate surface, and removing copolymer.

ARNOLD M S, JACOBBERGER R M, GOPALAN P, DWYER J H

Graphene-supported noble metal powder used in Schottky device, involves mixing oxidized graphene solution, gold/platinum noble metal precursor solution and reducing agent i.e. ascorbic acid, hydrazine hydrate and sodium borohydride, and carrying out hydrothermal reduction reaction.

LIU Y, PU Z, WANG H, FENG J, LI Y, DUAN J, ZHANG H

Preparing self-floating transparent nano ultra-thin film comprises e.g. preparing ultra-thin film material dispersion liquid, suction filtering nano-ultra-thin film layer on MXene substrate film layer by vacuum filtration, so that double-layer film structure is formed on substrate material.

LI Y, ZHAO J, WANG L, SHI C, WANG F, LING Z, SONG Y

Producing graphene macro-assembly (GMA)-fullerene composite involves providing graphene oxide, adding hydroxylated fullerene compound to the graphene oxide and performing gelation process using graphene oxide and hydroxylated fullerene.

HERNANDEZ M R C, BIENER M M, CAMPBELL P G

Preparing carbon-silicon three-dimensional structure composite material, involves dissolving graphene quantum dot in ultrapure water, dripping in copper(II) chloride or zinc chloride solution, mixing mixed emulsifier with e.g. graphite oxide aqueous solution and adding hydrazine hydrate to emulsion.

WU X, ZHANG E

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S