国家/地区 美国（6）
IPC部 C（6）
IPC大类 C30（6） H01（6） C01（5）
C23（3）
IPC小类 C30B（6）
IPC C30B029/02（5） C01B031/04（4） C23C016/26（3）
C30B025/18（3） H01L021/02（3） C01B031/02（2）
C01B032/182（2） C01B032/188（2） C23C016/44（2）
C30B001/02（2） H01L029/16（2）
发明人
公开年 2015（6）
申请年 2014（4） 
专利权人

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Preparation of semiconductor material used for forming semiconductor layer in semiconductor device, involves forming graphene layer on semiconductor, and forming and cleaving metal monolayer and epitaxial layer of gallium material.

BAYRAM C, DIMITRAKOPOULOS C D, FOGEL K E, KIM J, OTT J A, SADANA D K

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Composition for electrode used for battery comprises carbonaceous material consisting of graphene and reduced graphene oxide and sodium ions.

SINGH G, DAVID L

Formation of graphene-boron nitride interface used in e.g. formation of graphene-boron nitride heterostructure, involves exposing ruthenium substrate to ethylene, and sequentially exposing resultant substrate to oxygen and borazine.

SUTTER P W, SUTTER E A