国家/地区 日本（5）
IPC部 H（5） C（4） B（3）
IPC大类 H01（5） C01（4） B82（3）
IPC小类 H01L（5） C01B（4） B82Y（3）
IPC C01B031/02（4） H01L021/28（4） H01L021/336（4）
H01L029/78（4） B82Y030/00（3） B82Y040/00（3）
H01L029/06（3） C01B031/04（2） H01L021/285（2）
H01L029/417（2） H01L029/786（2） H01L051/05（2）
H01L051/30（2）
发明人 KAWABATA A（2）
公开年 2014（4）
申请年 2013（5）
专利权人 NAT INST ADVANCED IND SCI TECHNOLOGY（5）

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Graphene structure used for transparent electrode, comprises substrate, base which is formed on top of substrate, and vertical graphene which grows from base and stands in vertical direction with respect to surface of substrate.

KAWABATA A

Graphene-carbon nanotube structure for refinement of wiring in semiconductor device, has substrate, base formed on substrate, vertical graphene which grows from base, and stands in vertical direction with respect to substrate surface.

KAWABATA A

Graphene transistor has gate structure portion which is formed by laminating insulating film and metal electrode on channel region of graphene that is formed on insulating film.

NAKAHARAI S, NAKABARAI S

Electronic apparatus e.g. transistor, has protective film consisting of transition metal oxide that is formed on graphene film which is formed on insulating substrate, and insulating layer formed on protective film with electrode.

YAMAGUCHI J