国家/地区 世界知识产权组织（6）
IPC部 C（6）
IPC大类 C01（6） B82（4） H01（2）
IPC小类 C01B（6）
IPC C01B031/02（4） B82B003/00（3） C01B031/04（2）
发明人 DAVIS M A（6）
公开年 2014（6）
申请年 2014（6）
专利权人 DAVIS M A（6） SOLAN LLC（6）

Forming a graphene device, used to fabricate electronic device, comprises e.g. patterning a substrate to form many elements and trenches on substrate, and segmentedly overlaying a carbon source and initiating material on each element.

DAVIS M A

Multi-level stacked graphene structure, useful e.g. in electronic devices, comprises first graphene level overlayed on substrate, first interlayer overlayed on first graphene level, and second graphene level overlayed on first interlayer.

DAVIS M A

Forming graphene device includes creating foundation material on substrate having crystallographic or amorphic state, causing the material to adopt favored crystallographic or amorphic state and forming first graphene stack in first region.

DAVIS M A

Forming graphite based structure on substrate comprising many zones, used in e.g. solar cells, comprises doping first zone with carbon in accordance with many dopant profiles and generating graphene sublayers by heating.

DAVIS M A

Fabricating multilevel stacked graphene structure used in e.g. storage comprises forming graphene level with graphene stack, depositing interlayer and forming other graphene level with stack, where stack forms graphene based nanostructures.

DAVIS M A

Method for forming graphite-based structure used for e.g. electronic devices, involves patterning substrate, forming elements on substrate, depositing graphene initiating layer on top surface of each element, and generating graphene.

DAVIS M A