国家/地区 世界知识产权组织（28）
IPC部 C（28）
IPC大类 C01（28）
IPC小类 C01B（28）
IPC C01B031/04（22） C01B031/02（21） C23C016/26（19）
B82Y040/00（17） B82Y030/00（14） H01B001/04（6）
C23C016/02（5） B32B009/04（4） B32B009/00（3）
B82B003/00（3） C01B031/00（3） C01B032/186（3）
C23C016/01（3） C23C016/56（3） H01B013/00（3）
发明人 BAE S K（3） HONG B H（3） AHN J（2）
AHN J H（2） BACSA R（2） BAE S（2）
DING G（2） JIANG M（2） JUNG M H（2）
KIM S J（2） LEE K（2） SERP P（2）
TANG S（2） XIE X（2）
公开年 2012（16） 2011（6） 2013（6）
申请年 2011（28）
专利权人 CENT NAT REC.（3） EMPIRE TECHN.（3） CHINESE ACAD.（2） CNRS CENT NA.（2）
GRAPHENE SQU.（2） HANWHA TECHW.（2） INST NAT POL.（2） INT BUSINESS.（2）
SAMSUNG TECH.（2） SHANGHAI INS.（2） UNIV SUNGKYU.（2）

Coproducing carbon nanotube and graphene used in polymer matrix, by decomposition at high temperature of carbon source in gas state, comprises contacting carbon source with catalyst comprising mixture of active catalyst-A and catalyst-B.

BEAUSOLEIL J, SERP P, BACSA R, CAUSSAT B

Producing graphene comprises contacting solid catalyst in divided state comprising mixed oxide with gaseous composition flow comprising carbon source, where solid catalyst has single crystal structure and average crystalline domain size.

BACSA R, SERP P

Formation of patterned graphene layer on substrate used for low-noise amplifier, involves forming patterned structure(s) of carbide-forming metal or metal-containing alloy on substrate, applying layer of graphene and heating.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K, AFZALIARDAKANI A C O I

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Apparatus for growing carbon nanostructure i.e. graphene, on fiber for current carbon nanotube synthesis technique, has substrate inlet sized before growth zones to allow spoolable length substrate to pass through growth zones.

MALECKI H C, DAHNE J L, LOEBACH J P, GAIGLER R L, LEDFORD J T, MALECKI H, DAHNE J, LOEBACH J, GAIGLER R, LEDFORD J

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Method for preparing patterned graphene film, involves soaking substrate in acetone or photoresist peeling solution to remove photoresist or poly(methyl methacrylate) on graphene film to obtain patterned graphene film.

DAI T, YAO Q, ZHANG F

Graphene laminate for electrode and thin-conductive film for electric components e.g. transistor, comprises polymer layer containing p-type dopant and pin layer sequentially laminated on substrate and has specific surface resistance.

GWAN K O, OK C J, CHEON C M, HO J J, KWON O K, CHOI J O, JUNG J H, CHOI M C