国家/地区 世界知识产权组织（38）
IPC部 C（38）
IPC大类 C01（38）
IPC小类 C01B（38）
IPC C23C016/26（28） C01B031/02（27） C01B031/04（26）
B82Y040/00（16） B82Y030/00（15） C01B032/186（7）
C23C016/02（6） C23C016/56（5） B32B009/04（4）
H01B001/04（4） B32B009/00（3） B32B043/00（3）
C23C016/01（3） C23C016/44（3） C30B029/02（3）
发明人 DING G（5） HONG B H（5） XIE X（5）
JIANG M（4） AHN J（3） AHN J H（3）
HONG B（3） KIM H（3） TANG S（3）
BAE S（2） BAE S K（2） CHIBA G（2）
CHIBA Y（2） DENG P（2） DI Z（2）
公开年 2012（38）
申请年 2012（20）  2011（16）  2010（2） 
专利权人 CHINESE ACAD.（5） HANWHA TECHW.（5） SAMSUNG TECH.（5） SHANGHAI INS.（5）
EMPIRE TECHN.（3） GRAPHENE SQU.（3） KOREA ADV IN.（3） UNIV SUNGKYU.（3）
DENG P（2） DING G（2） GUO H（2） ISLAND GIANT.（2）
JX NIPPON MI.（2） KOREA ADVANC.（2） LEI T（2） NIPPON MININ.（2）
NIPPON MININ.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） UNIV XIDIAN（2）

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Manufacture of graphene film used for e.g. transparent display, involves forming graphene on catalyst metal film, forming another film on surface of graphene, on which catalyst metal film is not formed, and removing catalyst metal film.

SONG Y, SONG Y I

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F