国家/地区 Usa（6） China（2）
关键词 GRAPHENE FIELDEFFECT TRANSISTORS GFETS（11）
出版物 IEEE TRANSACTIONS O.（5） IEEE ELECTRON DEVIC.（2）
出版时间 2011（3）
机构 MIT（4）
作者 PALACIOS T（4） HSU A（3） KONG J（3） WANG H（3）

High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate

CARBON

HE ZZ, YU C, LIU QB, SONG XB, GAO XD, GUO JC, ZHOU CJ, CAI SJ, FENG ZH

Radio Frequency Performance Projection and Stability Tradeoff of h-BN Encapsulated Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

FEIJOO PC, PASADAS F, IGLESIAS JM, HAMHAM E, RENGEL R, JIMENEZ D

A Current-Voltage Model for Graphene Electrolyte-Gated Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

MACKIN C, HESS LH, HSU A, SONG Y, KONG J, GARRIDO JA, PALACIOS T

Graphene Field-Effect Transistors Based on Boron-Nitride Dielectrics

PROCEEDINGS OF THE IEEE

MERIC I, DEAN CR, PETRONE N, WANG L, HONE J, KIM P, SHEPARD KL

Vth Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection

IEEE TRANSACTIONS ON DEVICE MATERIALS RELIABILITY

LIU WJ, SUN XW, TRAN XA, FANG Z, WANG ZR, WANG F, WU L, ZHANG JF, WEI J, ZHU HL, YU HY

Influence of Metal-Graphene Contact on the Operation and Scalability of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

ZHAO P, ZHANG Q, JENA D, KOSWATTA SO

BN/Graphene/BN Transistors for RF Applications

IEEE ELECTRON DEVICE LETTERS

WANG H, TAYCHATANAPAT T, HSU A, WATANABE K, TANIGUCHI T, JARILLOHERRERO P, PALACIOS T

Compact Virtual-Source Current-Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

WANG H, HSU A, KONG J, ANTONIADIS DA, PALACIOS T

Graphene Frequency Multipliers

IEEE ELECTRON DEVICE LETTERS

WANG H, NEZICH D, KONG J, PALACIOS T

A Parameter Extraction Methodology for Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

JEPPSON K