国家/地区 Japan（15）
关键词 HETEROSTRUCTURE（2）
出版物 APPLIED PHYSICS LET.（4） APPLIED PHYSICS EXP.（2） JAPANESE JOURNAL OF.（2）
JOURNAL OF APPLIED .（2）
出版时间 2013（3） 2015（3） 2010（2） 2011（2）
机构 UNIV TOKYO（15）
作者 NAGASHIO K（15）

Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

ACS APPLIED MATERIALS INTERFACES

UWANNO T, TANIGUCHI T, WATANABE K, NAGASHIO K

Large Fermi energy modulation in graphene transistors with high-pressure O-2-annealed Y2O3 topgate insulators

APPLIED PHYSICS LETTERS

KANAYAMA K, NAGASHIO K, NISHIMURA T, TORIUMI A

The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity

APPLIED PHYSICS LETTERS

IFUKU R, NAGASHIO K, NISHIMURA T, TORIUMI A

Carrier density modulation in graphene underneath Ni electrode

JOURNAL OF APPLIED PHYSICS

MORIYAMA T, NAGASHIO K, NISHIMURA T, TORIUMI A

Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement

APPLIED PHYSICS LETTERS

NAGASHIO K, NISHIMURA T, TORIUMI A

Electrical transport properties of graphene on SiO2 with specific surface structures

JOURNAL OF APPLIED PHYSICS

NAGASHIO K, YAMASHITA T, NISHIMURA T, KITA K, TORIUMI A

Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

NAGASHIO K, TORIUMI A

Contact resistivity and current flow path at metal/graphene contact

APPLIED PHYSICS LETTERS

NAGASHIO K, NISHIMURA T, KITA K, TORIUMI A

Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor

JAPANESE JOURNAL OF APPLIED PHYSICS

NAGASHIO K, NISHIMURA T, KITA K, TORIUMI A

Mobility Variations in Mono- and Multi-Layer Graphene Films

APPLIED PHYSICS EXPRESS

NAGASHIO K, NISHIMURA T, KITA K, TORIUMI A