国家/地区 Usa（6） China（5）
关键词 BREAKDOWN（2） GRAPHENE（2） INTERCONNECT（2）
出版物 APPLIED PHYSICS LET.（4） CHINESE PHYSICS LET.（2） IEEE ELECTRON DEVIC.（2）
出版时间 2011（12）
机构 SUNY ALBANY（4） ZHEJIANG UNI.（3） NOVELLUS SYS.（2） PEKING UNIV（2）
作者 YU B（12）

The Tunable Bandgap of AB-Stacked Bilayer Graphene on SiO2 with H2O Molecule Adsorption

CHINESE PHYSICS LETTERS

WANG T, GUO Q, AO ZM, LIU Y, WANG WB, SHENG K, YU B

In-plane and tunneling pressure sensors based on graphene/hexagonal boron nitride heterostructures

APPLIED PHYSICS LETTERS

XU Y, GUO ZD, CHEN HB, YUAN Y, LOU JC, LIN X, GAO HY, CHEN HS, YU B

Electronic transport in monolayer graphene with extreme physical deformation: ab initio density functional calculation

NANOTECHNOLOGY

XU Y, GAO HY, LI MJ, GUO ZD, CHEN HS, JIN ZH, YU B

Transformation from AA to AB-Stacked Bilayer Graphene on alpha-SiO2 under an Electric Field

CHINESE PHYSICS LETTERS

LIU Y, AO ZM, WANG T, WANG WB, SHENG K, YU B

Formation of Graphene p-n Junction via Complementary Doping

IEEE ELECTRON DEVICE LETTERS

YU TH, KIM C, LIANG CW, YU B

Three-Dimensional Stacked Multilayer Graphene Interconnects

IEEE ELECTRON DEVICE LETTERS

YU TH, LIANG CW, KIM C, SONG ES, YU B

Bilayer Graphene/Copper Hybrid On-Chip Interconnect: A Reliability Study

IEEE TRANSACTIONS ON NANOTECHNOLOGY

YU TH, LEE EK, BRIGGS B, NAGABHIRAVA B, YU B

Chemical vapor deposition-assembled graphene field-effect transistor on hexagonal boron nitride

APPLIED PHYSICS LETTERS

KIM E, YU TH, SONG ES, YU B

Local electrical stress-induced doping and formation of monolayer graphene P-N junction

APPLIED PHYSICS LETTERS

YU TH, LIANG CW, KIM CD, YU B

Ultralow-voltage design of graphene PN junction quantum reflective switch transistor

APPLIED PHYSICS LETTERS

SOHIER T, YU B