国家/地区 Usa（6） China（2） Korea（2）
关键词 CHEMICAL VAPOUR DEPOSITION（15）
出版物 APPLIED PHYSICS LETTERS（15）
出版时间 2010（5） 2011（4） 2012（4） 2009（2）
机构 KOREA UNIV（2）
作者 EDDY CR（2） HITE JK（2）

Graphene-GaAs/AlxGa1-xAs heterostructure dual-function field-effect transistor

APPLIED PHYSICS LETTERS

TANG CC, LI MY, LI LJ, CHI CC, CHEN JC

Detection of sulfur dioxide gas with graphene field effect transistor

APPLIED PHYSICS LETTERS

REN YJ, ZHU CF, CAI WW, LI HF, JI HX, KHOLMANOV I, WU YP, PINER RD, RUOFF RS

Precision quantization of Hall resistance in transferred graphene

APPLIED PHYSICS LETTERS

WOSZCZYNA M, FRIEDEMANN M, GOTZ M, PESEL E, PIERZ K, WEIMANN T, AHLERS FJ

Substrate effect on the electronic structures of CuPc/graphene interfaces

APPLIED PHYSICS LETTERS

WU QH, HONG G, NG TW, LEE ST

Strain dependent resistance in chemical vapor deposition grown graphene

APPLIED PHYSICS LETTERS

FU XW, LIAO ZM, ZHOU JX, ZHOU YB, WU HC, ZHANG R, JING GY, XU J, WU XS, GUO WL, YU DP

Raman study on the interlayer interactions and the band structure of bilayer graphene synthesized by alcohol chemical vapor deposition

APPLIED PHYSICS LETTERS

OKANO M, MATSUNAGA R, MATSUDA K, MASUBUCHI S, MACHIDA T, KANEMITSU Y

Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

APPLIED PHYSICS LETTERS

KIM BJ, LEE C, JUNG Y, BAIK KH, MASTRO MA, HITE JK, EDDY CR, KIM J

Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride

APPLIED PHYSICS LETTERS

SUN J, LINDVALL N, COLE MT, TEO KBK, YURGENS A

Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

APPLIED PHYSICS LETTERS

TEDESCO JL, JERNIGAN GG, CULBERTSON JC, HITE JK, YANG Y, DANIELS KM, MYERSWARD RL, EDDY CR, ROBINSON JA, TRUMBULL KA, WETHERINGTON MT, CAMPBELL PM, GASKILL DK

Large-area graphene on polymer film for flexible and transparent anode in field emission device

APPLIED PHYSICS LETTERS

VERMA VP, DAS S, LAHIRI I, CHOI W