国家/地区 中国（6）
IPC部 H（4） C（3） B（2）
IPC大类 H01（4） B82（2） C30（2）
IPC小类 H01L（3） B82B（2） C30B（2）
IPC
发明人 YANG R（3） CHEN X（2） HUANG Q（2）
SHI D（2） WANG W（2） WANG Y（2）
ZHANG G（2）
公开年 2011（5）
申请年 2009（6）
专利权人 CHINESE ACAD SCI PHYSICS INST（6）

Preparing graphene on diamond surface, comprises e.g. placing substrate on substrate support in cavity of a filament chemical vapor deposition system and growing a diamond intermediate layer, growing boron doped diamond film and annealing.

LI J, GU C, LU C

Epitaxially growing cold cathode field emitting material, i.e. carbon film, on silicon carbide substrate by controlling density and length-width ratio of graphene strip through pressure and temperature in growth process.

WANG G, WANG W, JIA Y, CHEN X, GUO L, LI K, HUANG Q, PENG T, LIN J

Quantum dot sensitized solar cell, has electrolyte, and counter electrode provided with catalytic activity material that comprises one of active carbon, carbon black, flaky graphite, graphene or spherical graphite.

LI D, ZHANG Q, MENG Q, LUO Y

Method for performing anisotropic etching of graphene, involves cutting graphene and patterning graphene, to form zigzag edge.

WANG Y, YANG R, ZHANG G, SHI D, ZHANG L

Switching device for graphene nanometer electromechanical system, has graphene tape suspended over drain electrode and connected or disconnected with drain electrode when graphene tape is deformed.

WANG Y, YANG R, ZHANG G, SHI Z, SHI D

Method for epitaxially growing carbon semiconductor nanometer film material graphene on silicon carbide (SiC) substrate, involves annealing and removing default surface formed in growing process of graphene.

WANG W, CHEN X, YANG R, HUANG Q