国家/地区 美国（5） 日本（3） 世界知识产权组织（3） 中国（2） 欧洲专利局（EPO）（2） 韩国（2）
IPC部 G（8） H（6） B（4）
IPC大类 G11（8）
IPC小类 H01L（6） G11B（4） G11C（4）
B82Y（3） G01R（2）
IPC G11B005/39（3） H01L043/06（3） B82Y010/00（2）
G01R033/09（2） G11C011/18（2） H01L029/16（2）
H01L029/786（2）
发明人 GURNEY B A（2） MARINERO E E（2） PISANA S（2）
公开年 2010（4） 2011（3）
申请年 2009（8）
专利权人 GURNEY B A（2） HGST NETHERL.（2） PISANA S（2）

Magnetic disk useful in a computer, comprises a recording layer; and a layer of graphene formed above the recording layer.

GURNEY B A, MARINERO E E, PISANA S

Tunable Lorentz magnetoresistive magnetic field sensor for use in e.g. magnetic disk drive system, has gate electrode separated from n-graphene layer by non-magnetic, electrically insulating material.

GURNEY B A, MARINORO E E, PISANA S, MARINERO E E

Magnetic sensor used in e.g. thin film magnetic recording and reproducing head, has lower and top magnetic-shielding layers arranged from both sides of lamination direction of graphene layer and magnetization fixed and fixed layers.

SASAKI T, OIKAWA T, TAGAMI K

Electronic device comprises porous graphene layer including graphene nanoribbon and electrically connecting two graphene electrodes.

KAERKKAEINEN A M, HAQUE S M, COLLI A, PASANEN P M, JOHANNES K L M, UUSITALO M A, LEHTINIEMI R K, KARKKAAINEN A M, HAQUE S, KARKKAINEN L M J, KARKKAINEN L, UUSITALO M, LEHTINIEMI R, KARKKAINEN L M Y, KAERKKAEINEN L M J

Spin current valve apparatus, has atom or molecule having different energy of adsorption at zigzag edge of graphene nano ribbon and absorbed to edge of graphene nano ribbon at different density.

MYEONG CHOI S, HUN JI S, SEON M C, SEUNG H J

Fabricating etched surface on substrate comprises depositing layer of graphene on surface on substrate, patterning deposited layer of grapheme, and exposing surface on substrate to acid to etch surface on substrate.

BOLOTIN K, HONE J, KIM P, KLIMA M, STORMER H

Graphene-based memory cell for non-volatile memory, has graphene layer having controllable resistance states representing data values of the cell and ferroelectric layer controlling the resistance states.

NI G X, OEZYILMAZ B, TOH C T, ZHENG Y, NI G, TOH C, DU Z

Suspended structure i.e. top gate structure, for use in graphene device, has graphene layer on surface of substrate, and dielectric e.g. vacuum, interposed between electrically conductive suspended structure and graphene layer.

LAU C N, LIU G, VELASCO J