国家/地区 欧洲专利局（EPO）（4） 中国（3） 美国（3） 法国（2）
IPC部 C（6） B（2） H（2）
IPC大类 C23（6） C01（3） B82（2）
C25（2） H01（2）
IPC小类 C23C（6） C01B（3） B82Y（2）
C25D（2） H01L（2）
IPC C23C028/00（6）
发明人
公开年 2013（3） 2011（2）
申请年 2011（6）
专利权人

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Component e.g. high temperature operating element such as turbine blade has graphene layer which is directly arranged on substrate made of nickel-or cobalt-based superalloy, and metallic protective layer is formed on substrate.

CLOSSENVON LANKEN SCHULZ M, KADAU K

Selenium solar battery device has substrate, back electrode layer, indium-gallium-selenium light absorption layer, buffer layer, barrier layer and conductive window layer, which is n-shaped graphene film.

ZHANG K, XIAO X, YIN L

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J

Preparation of graphene film involves obtaining electroplated copper substrate, growing graphene on substrate by heating under normal pressure by chemical vapor deposition using methane and mixed gas of argon and hydrogen and cooling.

LI T, WANG W, WANG Y, ZHOU Y